Semiconductor physics

Annealing of high voltage 4H-SiC Schottky diodes irradiated with electrons at high temperatures

A. A. Lebedev^a, V. V. Kozlovsky^b, M. E. Levinshteĭn^a, D. A. Malevskii^a, G. A. Oganesyan^a, A. M. Strel'chuk^a, K. S. Davydovskaja<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: The effect of annealing on the parameters of 4H-SiC Schottky diodes irradiated with electrons at high temperatures has been studied for the first time. The electron energy was 0.9 MeV. The irradiation was carried out at temperatures of 23, 300, and 500$^\circ$C at fluences 8 in the range 1$\cdot$10$^{16}$–1.3$\cdot$10$^{17}$ cm$^{-2}$ . The results of annealing after the irradiation at high temperatures are qualitatively different from the results of annealing after conventional irradiation at room temperature with the same fluencies. The results obtained indicate that the spectrum of radiation defects introduced into SiC under a high-temperature (“hot”) irradiation differs significantly from that of defects introduced by irradiation at room temperature. At irradiation temperatures of 300 and 500$^\circ$C and large 8, the effect of “reverse annealing” was revealed, when the base resistance grows rather than falling as a result of annealing.

Keywords: silicon carbide, Schottky diode, electron irradiation, annealing, electrical properties.

Received: 30.11.2021
Revised: 19.12.2021
Accepted: 19.12.2021

DOI: 10.21883/FTP.2022.04.52201.9777

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