This article is cited in 1 paper

Semiconductor physics

Comparative study of photocells based on silicon doped with nickel by various methods

K. A. Ismailov^a, N. F. Zikrillaev^b, S. V. Koveshnikov^b, E. Zh. Kosbergenov<sup>a

a</sup> Karakalpak State University, 230112 Nukus, Uzbekistan
^b Tashkent State Technical University, 100095 Tashkent, Uzbekistan

Abstract: In this work, the parameters of silicon-based photocells doped with impurity nickel atoms by diffusion methods and during growth were compared. It was found that photocells doped with impurity nickel atoms during silicon growth have an improvement in parameters comparable to that obtained by the diffusion doping method. Additional heat treatment at $T$ = 800$^\circ$C makes it possible to significantly improve their basic parameters.

Keywords: silicon, photocell, nickel, thermal annealing, diffusion.

DOI: 10.21883/FTP.2022.04.52200.9768

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