Manufacturing, processing, testing of materials and structures

Thermoelectric and memristive features of the Sb$_2$Te$_3$/Sb$_2$S$_3$/Sb$_2$Te$_3$ and Ag/Sb$_2$Te$_3$/Ag structures

A. Papikyan^a, S. Harutyunyan^ab, N. Aghamalyan^ab, R. Ovsepyan^ab, A. Khachaturova^b, S. Petrosyan^ab, G. Badalyan^b, Y. Kafadaryan<sup>ab

a</sup> Russian-Armenian University, 0051 Yerevan, Armenia
^b Institute for Physical Research NAS of Armenia, 0203 Ashtarak-2, Armenia

Abstract: Single-layer Sb$_2$Te$_3$ films and three-layer Sb$_2$Te$_3$/Sb$_2$S$_3$/Sb$_2$Te$_3$ structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5–350 K). It is shown that the conductivity of Sb$_2$Te$_3$/Sb$_2$S$_3$/Sb$_2$Te$_3$ has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb$_2$Te$_3$ film; the Seebeck coefficient of Sb$_2$Te$_3$/Sb$_2$S$_3$/Sb$_2$Te$_3$ is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb$_2$Te$_3$, respectively. The current–voltage characteristics of the Sb$_2$Te$_3$ film exhibit memristive properties with unipolar resistive switching, whereas Sb$_2$Te$_3$/Sb$_2$S$_3$/Sb$_2$Te$_3$ can be considered as a memristor with a parallel connected capacitance.

Keywords: Sb$_2$S$_3$, Sb$_2$Te$_3$, films, volt-ampere characteristic, Seebeck coefficient, memristor.

Received: 11.11.2021
Revised: 16.11.2021
Accepted: 16.11.2021

DOI: 10.21883/FTP.2022.03.52126.9770

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