Non-electronic properties of semiconductors (atomic structure, diffusion)

Influence of samples obtaining mode and heat treatment on local structure of chalcogenide semiconductor Ge$_2$Sb$_2$Te$_5$

S. N. Garibova^ab, A. I. Isayev^a, S. I. Mekhtieva^a, S. U. Atayeva^a, R. I. Alekperov<sup>ac

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b Khazar University, Department of Physics and Electronics, Baku
^c Azerbaijan State Economic University, Baku

Abstract: Specifics of “amorphous state–crystal” phase transi- tions in dependence on the samples obtaining method and thermal processing, as well as changes in the structure and close range order in the arrangement of the atoms of Ge$_{20}$Sb$_{20.5}$Te$_{51}$ chalcogenide semiconductors have been studied by the X-ray diffraction and Raman spectroscopy. It has been shown that Ge$_{20}$Sb$_{20.5}$Te$_{51}$ films obtained by thermal evaporation on an unheated substrate are amorphous; after heat treatment at 220 and 400$^\circ$C, transform into a crystalline phase with a cubic and hexagonal structure. The chemical bonds and the main structural elements that form the matrix of the investigated objects, as well as the changes that occur in them during heat treatment, have been determined.

Keywords: chalcogenide semiconductors, local structure, phase transition, Raman spectroscopy.

Received: 15.09.2021
Revised: 23.10.2021
Accepted: 23.10.2021

DOI: 10.21883/FTP.2022.03.52113.9744

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