Non-electronic properties of semiconductors (atomic structure, diffusion)

Growth of GaAs$_{1-x}$Bi$_x$ layers by molecular-beam epitaxy

B. R. Semyagin^a, A. V. Kolesnikov^a, M. A. Putyato^a, V. V. Preobrazhenskii^a, T. B. Popova^b, V. I. Ushanov^b, V. V. Chaldyshev<sup>b

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: By molecular-beam epitaxy we have grown epitaxial layers of GaAs$_{1-x}$Bi$_x$ solid solutions with a bismuth content of 0 $< x <$ 0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers.

Keywords: gallium arsenide, bismuth, molecular-beam epitaxy, bandgap.

Received: 08.11.2021
Revised: 12.11.2021
Accepted: 12.11.2021

DOI: 10.21883/FTP.2022.03.52111.9764

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