Non-electronic properties of semiconductors (atomic structure, diffusion)

Anisotropic stresses in $\mathrm{GaN}(11\bar20)$ layers on an $r$-$\mathrm{Al}_2\mathrm{O}_3$ substrate during hydride vapor phase epitaxy

V. N. Bessolov, E. V. Konenkova, N. V. Seredova, V. N. Panteleev, M. P. Scheglov

Ioffe Institute, St. Petersburg, Russia

Abstract: It has been reported the growth of nonpolar $\mathrm{GaN}(11\bar20)$ structures by hydride vapor phase epitaxy, which used an $\mathrm{AlN}$ buffer layer synthesized by epitaxy from organometallic compounds on an $r$-$\mathrm{Al}_2\mathrm{O}_3$ substrate. It has been shown that the elastic stresses in the $\mathrm{GaN}(11\bar20)$/$r$-$\mathrm{Al}_2\mathrm{O}_3$ structure in the direction of the “c” and “a” axes of the layer differ, correlate with the values of the full width at half maximum of the X-ray diffraction spectra in these directions and are due to the anisotropy of the thermal expansion coefficients of the lattice, both the layer and the substrate.

Keywords: nonpolar aluminum nitride, anisotropic stress in the layer.

Received: 18.10.2021
Revised: 10.11.2021
Accepted: 10.11.2021

DOI: 10.21883/FTP.2022.03.52108.9758

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