Semiconductor physics

MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric

A. E. Klimov^ab, V. A. Golyashov^ac, D. V. Gorshkov^a, E. V. Matyushenko^a, I. G. Neizvestnyi^ab, G. Yu. Sidorov^a, N. S. Pschin^a, S. P. Suprun^a, O. E. Tereshchenko<sup>ac

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Novosibirsk State Technical University, 630073 Novosibirsk, Russia
^c Novosibirsk State University, 630073 Novosibirsk, Russia

Abstract: Results on the creation and properties of transistor-type MIS structures (MIST) with an Al$_2$O$_3$ thin-film gate dielectric based on PbSnTe : In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate-controlled characteristics of the MIST at $T$ = 4.2 K have been investigated. It is shown that in MIST based on PbSnTe : In films with $n\sim$ 10$^{17}$ cm$^{-3}$ the modulation of the channel current reaches 7–8% in the range of gate voltages -10 V $<U_\text{gate}<$ +10 V. The features of the source-drain CVC and the gate-controlled characteristics for a pulsed and sawtooth variation of $U_\text{gate}$ are considered.

Keywords: solid solution PbSnTe : In, field effect, MIS structure, Al$_2$O$_3$.

Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2022.02.51969.30

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