Surface, interfaces, thin films

Study of heavily doped $n$-$3\mathrm{C}$-$\mathrm{SiC}$, epitaxial films grown on $6H$-$\mathrm{SiC}$ semi-insulating substraes by sublimation method

A. A. Lebedev, V. Yu. Davydov, I. A. Eliseyev, S. P. Lebedev, I. P. Nikitina, G. A. Oganesyan, A. N. Smirnov, L. V. Shakhov

Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: Heavily doped $3\mathrm{C}$-$\mathrm{SiC}$ films based on semi-insulating $6H$-$\mathrm{SiC}$ substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers.

Keywords: $\mathrm{SiC}$, heteroepitaxy, cubic silicon carbide, X-ray diffractometry, Hall effect, photoluminescence.

Received: 11.10.2021
Revised: 18.10.2021
Accepted: 18.10.2021

DOI: 10.21883/FTP.2022.02.51966.9752

Bibliographic databases:

•