Non-electronic properties of semiconductors (atomic structure, diffusion)

Germanium diffusion from buried SiO$_2$ layer and SiGe phase formation

I. E. Tyschenko^a, R. A. Khmelnitskii^bc, V. V. Saraikin^de, V. A. Volodin^af, V. P. Popov<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^c Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, Fryazino, Russia
^d State Research Institute of Physical Problems, Zelenograd, Russia
^e V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia
^f Novosibirsk State University, Novosibirsk, Russia

Abstract: The Ge diffusivity from the buried SiO$_2$ layer of silicon-on-insulator structure as a function of annealing temperature was studied. It was shown that at an annealing temperature below 900$^\circ$C, almost all Ge is localized in the implantation region in the SiO$_2$ layer. As annealing temperature reached 1100$^\circ$C, the migration of ion-implanted Ge is accompanied by several processes: diffusion in SiO$_2$, accumulation at the Si/SiO$_2$ interface, diffusion into Si as well as evaporation from silicon. The Ge diffuses from SiO$_2$ to the bonding interface of the silicon-on-insulator structure with the diffusion coefficient of $\sim$2$\cdot$10–15 cm$^2$/s that is two orders of magnitude higher than its equilibrium value. Depending on the thickness of the silicon layer, the formation of the Ge or SiGe phase after annealing at a temperature of 1100$^\circ$C was detected.

Keywords: sige, ion implantation, diffusion, silicon-on-insulator.

Received: 15.09.2021
Revised: 23.09.2021
Accepted: 23.09.2021

DOI: 10.21883/FTP.2022.02.51961.9740

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