Semiconductor physics

Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD

A. B. Chigineva, N. V. Baidus, S. M. Nekorkin, K. S. Zhidyaev, V. E. Kotomina, I. V. Samartsev

National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia

Abstract: The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na$_2$S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology.

Keywords: thyristors, blocking voltage, sulfide passivation, gallium arsenide, mesastructure.

Received: 25.08.2021
Revised: 14.09.2021
Accepted: 14.09.2021

DOI: 10.21883/FTP.2022.01.51824.9732

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