This article is cited in 1 paper

Electronic properties of semiconductors

Effect of neutron irradiation on the spectrum of deep-level defects in GaAs grown by liquid-phase epitaxy in hydrogen or argon ambient

M. M. Sobolev, F. Yu. Soldatenkov

Ioffe Institute, St. Petersburg, Russia

Abstract: The results of experimental studies of capacitance-voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs $p^+$–$p^0$–$i$–$n^0$-GaAs diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900$^\circ$C from one solution-melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the $n^0$-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance-voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs $p^+$–$p^0$–$i$–$n^0$ structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.

Keywords: GaAs, neutron irradiation, capacitance spectroscopy, $p^0$–$i$–$n^0$-junction, liquid-phase epitaxy, hydrogen, argon.

Received: 12.08.2021
Revised: 27.08.2021
Accepted: 27.08.2021

DOI: 10.21883/FTP.2022.01.51812.9729

Bibliographic databases:

•