This article is cited in 7 papers

XVII Interstate Conference ''Thermoelectrics and Their Applications -- 2021" (ISCTA 2021 St. Petersburg, September 13-16, 2021)

Methods for investigation of electrical contact resistance in a metal film–semiconductor structure

M. Yu. Shtern^a, I. S. Karavaev^b, M. S. Rogachev^a, Yu. I. Shtern^a, B. R. Mustafoev^a, E. P. Korchagin^a, A. O. Kozlov<sup>a

a</sup> National Research University of Electronic Technology, 124498 Moscow, Zelenograd, Russia
^b Stock Company "Chepetsky Mechanical Plant", 427622 Glazov, Russia

Abstract: The electrical contact resistance significantly affects the efficiency of thermoelements. In the case of high doped thermoelectric materials, the tunneling mechanism of conductivity prevails at metal-semiconductor interface, which makes it possible to obtain a contact resistance of less than $<$10$^{-8}$ Ohm$\cdot$m$^2$. Low resistance values significantly complicate its experimental determination. Work present three techniques and a measuring stand for the investigation of contact resistance. The techniques are based on the measurement of the total electrical resistance, which consists of transient contact resistance and the resistance of the thermoelectric material with its subsequent exclusion. The developed techniques differ in the arrangement of the investigated contacts on the samples, in the methods of measurement and processing of the obtained results, and make it possible to determine the specific contact resistance of the order of $\sim$10$^{-10}$ Ohm$\cdot$m$^2$.

Keywords: thermoelements, film contacts, contact resistance, measurement techniques.

Received: 19.09.2021
Revised: 24.09.2021
Accepted: 24.09.2021

DOI: 10.21883/FTP.2022.01.51808.24

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