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XVII Interstate Conference ''Thermoelectrics and Their Applications -- 2021" (ISCTA 2021 St. Petersburg, September 13-16, 2021)
Thermoelectric properties of $p$-type Bi$_{0.5}$Sb$_{1.5}$Te$_3$ films on flexible substrate
Yu. V. Granatkinaa,
Z. M. Dashevskiib a Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Moscow
b RusTec LLC, 109383 Moscow, Russia
Abstract:
Bi
$_2$Te
$_3$-based compounds are excellent candidates for the low-temperature thermoelectric application. In the present work, a technology for fabrication of
$p$-Bi
$_{0.5}$Sb
$_{1.5}$Te
$_3$ films with high thermoelectric efficiency on a thin flexible polyimide substrate has been developed. The preparation of films was carried out by a flash evaporation method. A systematic study of the transport properties (Hall coefficient, Seebeck coefficient, electrical conductivity, transverse Nernst coefficient) over the entire temperature range of 80–400 K for
$p$-Bi
$_{0.5}$Sb
$_{1.5}$Te
$_3$ films has been performed. The power factor (PF) for the
$p$-Bi
$_{0.5}$Sb
$_{1.5}$Te
$_3$ (doped with 0.5 wt% Te) film reached the value of
$\sim$30
$\mu$W/cm
$\cdot$ K
$^2$, which is among the highest values of the PF reported in the literature to date for a film on a flexible polyimide (amorphous) substrate. The measured thermal diffusivity along the film allowed us to accurately estimate the figure of merit
Z for
$p$-Bi
$_{0.5}$Sb
$_{1.5}$Te
$_3$ films considering the anisotropic effect of Bi
$_2$Te
$_3$-based materials. A significant enhancement of
Z up to
$\sim$3.0
$\cdot$ 10
$^{-3}$ K has been obtained for these films, which is state-of-the-art even compared to bulk materials. This research can provide insight into the fabrication of
$p$-type branch of the film thermoelectric modules (FTEM), which could be a candidate for application in micro-scale thermoelectric generators.
Keywords:
$p$-Bi$_{0.5}$Sb$_{1.5}$Te$_3$ film, thin flexible substrate, thermoelectric properties. Received: 18.08.2021
Revised: 25.08.2021
Accepted: 25.08.2021
DOI:
10.21883/FTP.2022.01.51803.05