Abstract:
A quantitative model of the breakdown of MOS-structures with relatively thick (10–100 nm) gate dielectric by the mechanism of anode hydrogen release from interphase boundary Si–SiO$_2$ is proposed. The breakdown delay time is determined by dispersion transport and accumulation of hydrogen ions in the gate dielectric. It is shown that at a high concentration of hydrogen in MOS structures and electric field strength of less than $\sim$10 MV/cm, the model satisfactorily describes breakdown delay times significantly shorter than those expected from the $1/E$ model. At higher field strengths, the breakdown is described by the anode hole injection model.
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