Manufacturing, processing, testing of materials and structures

Application of the X-ray Reflectometry method for determination of composition gradients at the quantum well boundary in laser structures based on the AlGaAs/GaAs system

A. V. Berezutskiy, G. T. Mikayelyan, S. J. Tariverdiyev

Lassard systems, 249032 Obninsk, Russia

Abstract: Devoted to the application of X-ray reflectometry to determine composition gradients at the boundaries of a quantum well in heterostructures based on AlGaAs/GaAs obtained by the MOCVD method. It is shown that the method is applicable at the stage of working out the active area. The parameters for recording reflectometric curves have been selected. The composition gradients in the experimental sample have been measured.

Keywords: X-ray reflectometry, quantum well, heterojunction, transition layer, GaAs.

Received: 31.05.2023
Revised: 14.06.2023
Accepted: 12.12.2023

DOI: 10.61011/FTP.2023.09.56994.5279

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