Semiconductor physics

Field $p$-channel transistors based on GaN/AlN/GaN heterostructures on a silicon substrate

M. N. Zhuravlev, V. I. Egorkin

National Research University of Electronic Technology, 124498 Zelenograd, Moscow, Russia

Abstract: Various types of $p$-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate.

Keywords: AlN/GaN heterostructure, two-dimensional hole gas, $p$-channel transistor, polarization.

Received: 23.08.2023
Revised: 04.12.2023
Accepted: 11.12.2023

DOI: 10.61011/FTP.2023.09.56993.5503

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