Semiconductor structures, low-dimensional systems, quantum phenomena

Mechanisms of optical gain in heavily doped Al$_x$Ga$_{1-x}$N : Si structures ($x$ = 0.56–1)

P. A. Bokhan^a, K. S. Zhuravlev^a, D. È. Zakrevskii^ab, T. V. Malin^a, N. V. Fateev<sup>ac

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Novosibirsk State Technical University, 630073 Novosibirsk, Russia
^c Novosibirsk State University, 630090 Novosibirsk, Russia

Abstract: The optical gain parameters in the six heavily doped Al$_x$Ga$_{1-x}$N : Si structures with $x$ = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with $\lambda$ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain ($>$ 10$^3$ cm$^{-1}$) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections ($\sim$10–15 cm$^2$) and the high density (up to 1020 cm$^{-3}$) of radiative recombination centers.

Keywords: heavily doped Al$_x$Ga$_{1-x}$N structures, optical gain, electron-acceptor recombination, donor-acceptor recombination, AlN/GaN heterostructure, two-dimensional hole gas, $p$-channel transistor, polarization.

Received: 03.10.2023
Revised: 10.11.2023
Accepted: 11.11.2023

DOI: 10.61011/FTP.2023.09.56987.5627

Bibliographic databases:

•