Non-electronic properties of semiconductors (atomic structure, diffusion)

Defects in GaInAsBi epitaxial films on Si(001) substrates

A. S. Pashchenko^ab, O. V. Devitsky^ab, M. L. Lunina<sup>a

a</sup> Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, 344006 Rostov-on-Don, Russia
^b North-Caucasus Federal University, 355009 Stavropol, Russia

Abstract: Growth of a thin GaInAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer–Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed $\{111\}$ planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 $\mathring{\mathrm{A}}$. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm.

Keywords: III–V compounds, highly mismatched alloys, pulsed laser deposition, GaInAsBi, silicon.

Received: 31.07.2023
Revised: 29.11.2023
Accepted: 01.12.2023

DOI: 10.61011/FTP.2023.08.56963.5468

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