International Physics Conference, St. Petersburg, October 23-27, 2023, St. Petersburg

Defects with deep levels in high-voltage gradual $p$–$i$–$n$ heterojunctions AlGaAsSb/GaAs

M. M. Sobolev, F. Yu. Soldatenkov

Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: High-voltage gradual $p^0$–$i$–$n^0$ junctions of Al$_x$Ga$_{1-x}$As$_{1-y}$Sb$_y$ with $x\sim$ 0.24 and $y\sim$ 0.05 in the $i$-region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the $DX$-center of the Si donor impurity, with a thermal activation energy $E_t$ = 414 meV, a capture cross section $\sigma_n$ = 1.04$\cdot$10$^{-14}$ cm$^2$, and a concentration $N_d$ = 2.4$\cdot$10$^{15}$ cm$^{-3}$. In the heterostructures studied, there were no deep levels associated with dislocations.

Keywords: AlGaAsSb, $p^0$–$i$–$n^0$ junction, DLTS, $DX$-center, liquid phase epitaxy.

Received: 12.05.2023
Revised: 17.07.2023
Accepted: 30.10.2023

DOI: 10.61011/FTP.2023.08.56961.5131C

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