Manufacturing, processing, testing of materials and structures

Influence of intermediate low-temperature heating on precipitation in nonstoichiometric GaAs

L. A. Snigirev^a, N. A. Bert^a, V. V. Preobrazhenskii^b, M. A. Putyato^b, B. R. Semyagin^b, V. V. Chaldyshev<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

Abstract: Initial stage of precipitate formation during post-growth annealing of nonstoichiometric GaAs and GaAs$_{0.97}$Sb$_{0.03}$ grown by low-temperature (150$^\circ$C) MBE on GaAs (001) substrate with intermediate growth interruption and simultaneous heating up to 250$^\circ$C was studied by transmission electron microscopy. Short-term intermediate heating despite the low temperature was revealed to result in the precipitation of larger particles during subsequent post-growth annealing compared to the material not subjected to such heating. This effect is explained by the huge concentration of excess arsenic in LT-GaAs and LT-GaAs$_{0.97}$Sb$_{0.03}$ grown at 150$^\circ$C, enhanced diffusion due to the high concentration of nonequilibrium gallium vacancies, and non-threshold nucleation.

Keywords: nonstoichiometric GaAs, LT-GaAs, precipitation.

Received: 10.08.2023
Revised: 22.08.2023
Accepted: 28.08.2023

DOI: 10.61011/FTP.2023.06.56482.5487

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