Semiconductor physics

Spatial electroluminescence distribution and internal quantum efficiency in substrate free InAsSbP/InAsSb double heterostructure

B. A. Matveev^a, V. I. Ratushnyi^b, A. Yu. Rybalchenko<sup>b

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Volgodonsk Engineering and Technology Institute, Branch of National Research Nuclear University Moscow Engineering Physics Institute, 347360 Volgodonsk, Russia

Abstract: In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into account the dependence of the internal quantum yield on the current density with the dominance of Auger recombination in flip-chip diodes based on InAsSbP/InAsSb double heterostructures ($\lambda$ = 4.2 $\mu$m). By comparing the calculated data and the radiation distribution over the sample surface, the internal quantum efficiency of electroluminescence and its dependence on the current density at room temperature are determined.

Keywords: A$^{\mathrm{III}}$B$^{\mathrm{V}}$ narrow gap heterostructures, mid-IR LEDs, current crowding in LEDs, InAsSb based LEDs, internal quantum efficiency in InAsSb based LEDs.

Received: 05.04.2023
Revised: 26.07.2023
Accepted: 01.08.2023

DOI: 10.61011/FTP.2023.06.56481.4798

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