Surface, interfaces, thin films

Photoluminescence of arsenic doped epitaxial films of Cd$_{0.3}$Hg$_{0.7}$Te

M. S. Ruzhevich^a, D. D. Firsov^b, O. S. Komkov^b, K. J. Mynbaev^ac, V. S. Varavin^d, M. V. Yakushev<sup>d

a</sup> ITMO University, 197101 St. Petersburg, Russia
^b Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia
^c Ioffe Institute, 194021 St. Petersburg, Russia
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

Abstract: The results of photoluminescence (PL) study of As-doped Cd$_{0.3}$Hg$_{0.7}$Te solid solutions films grown by molecular beam epitaxy on a Si substrate are presented. Analysis of the PL spectra obtained at different temperatures and excitation laser powers allows one to judge the nature of the observed peaks. The activation of arsenic in annealed samples was established, as a result of which shallow acceptor levels are formed. The effectiveness of arsenic as an acceptor impurity for cadmium-mercury tellurides has been confirmed.

Keywords: CdHgTe, doping, acceptor impurity, photoluminescence.

Received: 05.07.2023
Revised: 05.09.2023
Accepted: 07.09.2023

DOI: 10.61011/FTP.2023.06.56479.5375

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