Non-electronic properties of semiconductors (atomic structure, diffusion)

In situ ellipsometric control of growth processes of ZnTe and CdTe buffer layers in technology of molecular beam epitaxy of mercury cadmium telluride

V. A. Shvets^ab, D. V. Marin^ab, M. V. Yakushev^a, S. V. Rykhlitskii<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
^b Novosibirsk State University, 630090 Novosibirsk, Russia

Abstract: The problems of in situ ellipsometric control during the growth of ZnTe and CdTe buffer layers intended for cadmium-mercury-tellurium epitaxy are considered. It has been established that for 20 nm ZnTe layers the spectral dependences of the optical constants near the absorption edge are smoothed, which indicates the presence of structural defects in the film. It has been shown that the microrelief of the CdTe growth surface is a criterion for the structural perfection of the layers and can be measured using an ellipsometer both at the early stages and during steady-state growth.

Keywords: molecular beam epitaxy, in situ ellipsometric control, CdTe, microrelief, growth defects.

Received: 15.06.2023
Revised: 28.07.2023
Accepted: 03.08.2023

DOI: 10.61011/FTP.2023.06.56476.5278

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