XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Low resistance state degradation during endurance measurements in HfO$_2$(8 нм)/HfO$_X$N$_Y$-based structures

O. O. Permyakova^ab, A. E. Rogozhin^a, A. V. Myakon'kikh^a, K. V. Rudenko<sup>a

a</sup> Valiev Institute of Physics and Technology of Russian Academy of Sciences, 117218 Moscow, Russia
^b Moscow Institute of Physics and Technology (National Research University), 141701 Dolgoprudny, Moscow Region, Russia

Abstract: The mechanism of resistive switching in Pt/HfO$_2$(8 нм)/HfO$_X$N$_Y$(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements.

Keywords: memristor, hafnium oxide, complementary resistive switching, bipolar resistive switching, endurance.

Received: 24.08.2023
Revised: 01.09.2023
Accepted: 01.09.2023

DOI: 10.61011/FTP.2023.06.56473.39k

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