XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Temperature quenching of the terahertz photoluminescence of shallow acceptors in HgCdTe ternary alloy

D. V. Kozlov^ab, M. S. Zholudev^ab, K. A. Mazhukina^ab, V. Ya. Aleshkin^ab, V. I. Gavrilenko<sup>ab

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
^b National Research Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia

Abstract: The capture times of holes to the shallow excited levels of neutral mercury vacancy via acoustic phonon emission are calculated for Hg$_{1-x}$Cd$_x$Te, as well as the transition times of holes from shallow localized levels to the continuum of the valence band at different temperatures. Due to the redistribution of carriers in the valence band with temperature, the time of carrier capture to the localized levels of the neutral vacancy increases, and the time of reionization to the continuum decreases. Based on the calculation results, a model is proposed to describe the temperature quenching of photoluminescence caused by radiative transitions between the localized states of holes on a neutral mercury vacancy.

Keywords: HgCdTe, photoluminescence, shallow acceptor.

Received: 24.08.2023
Revised: 01.09.2023
Accepted: 01.09.2023

DOI: 10.61011/FTP.2023.06.56470.34k

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