XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Optical excitation of spin-triplet states of two-electron donors in silicon

V. V. Tsyplenkov, R. Kh. Zhukavin, V. N. Shastin

The Institute for Physics of Microstructures of the Russian Academy of Sciences, 603087 Afonino, Nizhny Novgorod region, Kstovsky district, Russia

Abstract: In this paper, we propose a method for resonant optical excitation of ortho states of two-electron donors in silicon, direct transitions to which from the ground state are extremely suppressed in case of a weak spin-orbit coupling. Excitation is proposed to be carried out using the points of anti-crossing of ortho and para states under conditions of uniaxial stress of the crystal. In these points the states cannot be unambiguously assigned to any group of states with a certain spin, as a result of which the optical transition becomes allowed. The structure of the energy levels of two-electron impurities is such that the excitation of such state almost unambiguously leads to the population of the underlying ortho-type state, which is expected to be very long-lived in the case of weak spin-orbit coupling. In the present work, theoretical estimates of the cross sections for optical transitions in the vicinity of the level anticrossing point as a function of strain for strong and weak spin-orbit coupling are made.

Keywords: doubly charged donors, para and ortho states, optical transitions, spin-orbit interaction.

Received: 05.05.2023
Revised: 29.06.2023
Accepted: 06.07.2023

DOI: 10.21883/FTP.2023.05.56198.18k

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