XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Effect of arsenic pressure during overgrowth of InAs quantum dots with a thin low-temperature GaAs layer on their optical properties

S. V. Balakirev^a, D. V. Kirichenko^a, S. D. Komarov^b, A. S. Dragunova^b, N. E. Chernenko^a, N. A. Shandyba^a, N. V. Kryzhanovskaya^b, A. E. Zhukov^b, M. S. Solodovnik<sup>a

a</sup> Institute of Nanotechnologies, Electronics and Equipment Engineering, Taganrog, Russia
^b International Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, 190008 St. Petersburg, Russia

Abstract: This paper presents the results of the experimental studies of InAs quantum dot overgrowth by a low-temperature GaAs layer at different arsenic vapor pressures. We reveal that a threefold decrease in the arsenic pressure at a fixed deposition rate of the capping layer leads to a change in the shape of the photoluminescence spectrum of quantum dots with one maximum at the level of 1.19 eV to the shape of the spectrum with two low-energy contributions at the levels of 1.08 and 1.15 eV. Based on the analysis of the power dependences of the photoluminescence spectra, we conclude that the low-energy contributions of the photoluminescence of quantum dots overgrown at a low arsenic pressure correspond to the ground-state emission of two groups of quantum dots with different average sizes formed during mass transfer in the “quantum dot–wetting layer–matrix” system.

Keywords: quantum dots, InAs/GaAs, Stranski–Krastanov mechanism, molecular beam epitaxy, arsenic pressure.

Received: 05.05.2023
Revised: 18.05.2023
Accepted: 18.05.2023

DOI: 10.21883/FTP.2023.04.55898.13k

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