XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Influence of single radiation defect cluster formation on transistor memory cell switching

I. Yu. Zabavichev^ab, A. S. Puzanov^ab, S. V. Obolensky<sup>ab

a</sup> National Research Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
^b Federal State Unitary Enterprise "Russian Federal Nuclear Center — All-Russian Research Institute of Experimental Physics", Sarov, Nizhny Novgorod Region, Russia

Abstract: The effect of a single radiation defects cluster formation on the transistor memory cell switching was studied. Estimates of the nuclear particle energy, capable of forming a cluster of radiation defects, causing a soft error of modern silicon transistors with various channel sizes. The failure cross sections for six and eight-element transistor memory cells are calculated for various technological processes under the influence of a neutron flux.

Keywords: transistor memory cell, radiation defect cluster, single event upset.

Received: 05.05.2023
Revised: 29.06.2023
Accepted: 06.07.2023

DOI: 10.21883/FTP.2023.04.55897.15k

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