XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Crossover between Mott’s and Arrhenius’ laws in the temperature dependence of resistivity of highly boron-doped delta-layers in artificial diamond

V. A. Kukushkin^ab, M. A. Lobaev^a, A. L. Vikharev^a, A. M. Gorbachev^ab, D. B. Radishev^a, E. A. Arkhipova^a, M. N. Drozdov^a, Yu. V. Kukushkin^b, V. A. Isaev^a, S. A. Bogdanov<sup>a

a</sup> Institute of Applied Physics of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
^b National Research Lobachevsky State University of Nizhny Novgorod, 603005 Nizhny Novgorod, Russia

Abstract: Experimental temperature dependence of the resistivity of thin (1–3 nm) highly boron-doped (close to the threshold of the phase transition into a state with a metallic-type conductivity) delta-layers in chemically vapor deposited (CVD) diamond in a broad temperature range from $\sim$100 to $\sim$500 K can be described by Mott’s two- dimensional law (hole “hops” between localized states with a temperature-dependent average “hop” length) in a low temperature region and Arrhenius’ law (hole “hops” between the nearest localized states) in a high temperature region. The crossover between them takes place at 230–300 K. The potentials of hole localized states are of a long-range, e. g. Coulomb’s, type, the static dielectric permittivities of delta-layers are by several times larger than those of undoped CVD diamond.

Keywords: CVD diamond, Arrhenius law, Mott’s law, doped $\delta$-layers, “jump” conductivity, phase transition insulator–metal.

Received: 05.05.2023
Revised: 19.06.2023
Accepted: 20.06.2023

DOI: 10.21883/FTP.2023.04.55895.10k

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