XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Charged vacancies formation in AlAs anionic sublattice

T. S. Shamirzaev<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University, Novosibirsk, Russia

Abstract: The vacancy formation dynamics in doped semiconductor heterostructures with quantum dots (QDs) formed in the AlAs anionic sublattice has been studied. A theoretical model that describes the effect of doping on the vacancy generation dynamics is constructed. It is shown that the generation of positively charged arsenic vacancies is more probable than the generation of neutral ones at high hole concentrations. On the other hand, at high electron concentrations, the formation of neutral arsenic vacancies is more efficient than that positively charged ones. It has been experimentally revealed that the vacancy-stimulated high-temperature diffusion of antimony is enhanced (suppressed) in $p$-($n$-)doped heterostructures with Al(Sb,As)/AlAs QDs.

Keywords: charged vacancies, quantum dots, atomic diffusion.

Received: 05.05.2023
Revised: 18.05.2023
Accepted: 18.05.2023

DOI: 10.21883/FTP.2023.04.55890.01k

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