Semiconductor physics

Determining the mechanisms of current flow in structures of two-layer dielectrics

S. V. Bulyarskii^a, V. S. Belov^ab, G. G. Gusarov^a, A. V. Lakalin^a, K. I. Litvinova^a, A. P. Orlov<sup>a

a</sup> Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, 119991 Moscow, Russia
^b National Research University of Electronic Technology, 124498 Zelenograd, Russia

Abstract: Diodes of type Metal-Dielectric 1-Dielectric 2-Metal are promising for use in devices paired with antennas-rectennas. To create diodes with the characteristics required for operation, it is necessary to understand the mechanisms of current transport in both dielectrics and their contacts with metals. To solve this problem, it is necessary to develop an algorithm for dividing the general current-voltage characteristic into characteristics of individual contacts, the analysis of which will also allow us to investigate the problems of the properties of defects in the dielectrics that make up the diode. In this paper, the solution of the above problems is presented on the example of the Al$_2$O$_3$-Ta$_2$O$_5$-Ni diode. The authors showed how one can divide the current-voltage characteristic into components, calculate potential barriers at the boundaries of metals with contacting dielectrics, and determine the concentration and energy characteristics of structural defects in dielectrics.

Keywords: metal-insulator-metal diodes, current-voltage characteristics, Poole–Frenkel effect, currents of thermionic and thermal field emission, currents limited by space charge.

Received: 18.04.2022
Revised: 10.03.2023
Accepted: 10.03.2023

DOI: 10.21883/FTP.2023.02.55335.3545

Bibliographic databases:

•