This article is cited in 1 paper

Semiconductor physics

Effect of proton irradiation on the properties of high-voltage integrated 4$H$-SiC Schottky diodes at operating temperatures

A. A. Lebedev^a, V. V. Kozlovsky^b, M. E. Levinshteĭn^a, D. A. Malevskii^a, G. A. Oganesyan<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia

Abstract: The effect of proton irradiation (proton energy 15 MeV) on the parameters of high-voltage 4$H$-SiC integrated Schottky diodes (JBS) was studied for the first time in the operating temperature range $T_i$ (23 and 175$^\circ$C). The blocking voltage of the diodes under study, $U_b$, was 600 and 1700 V. For devices with $U_b$ = 600 V, the fluence range was 5$\cdot$10$^{13}$–1$\cdot$10$^{14}$ cm$^{-2}$; for devices with $U_b$ = 1700 V, the fluence range was 3$\cdot$10$^{13}$–6$\cdot$10$^{13}$ cm$^{-2}$. An increase in the irradiation temperature leads to a noticeable decrease in the effect of irradiation on the current-voltage characteristics of the diodes. The effect of annealing on the current-voltage characteristics of irradiated devices is studied.

Keywords: silicon carbide, Schottky diodes, proton irradiation, current-voltage characteristics, annealing.

Received: 21.12.2022
Revised: 16.01.2023
Accepted: 16.01.2023

DOI: 10.21883/FTP.2023.01.54930.4475

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