Micro- and nanocrystalline, porous, composite semiconductors

Evolution of composition and topography of A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors during sputtering with argon ions

A. E. Ieshkin^a, A. A. Tatarintsev^a, B. R. Senatulin^b, E. A. Skryleva<sup>b

a</sup> Lomonosov Moscow State University, Faculty of Physics, 119991 Moscow, Russia
^b National University of Science and Technology «MISIS», 119049 Moscow, Russia

Abstract: A systematic study of the composition and structure of the surface of A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors (GaP, GaAs, GaSb, InP, InAs, InSb) after irradiation with 3 keV argon ions was carried out. The surface composition was determined using X-ray photoelectron spectroscopy. The results obtained are discussed in terms of preferential sputtering and radiation-stimulated segregation. It is shown that the observed enrichment with the metallic component is not explained by these processes alone. A developed relief in the form of nanopillars was observed on the surface of indium-containing materials, while no relief development was found on the GaP surface. This behavior is associated with the patterns of wetting of the semiconductor surface by the surface-enriching component.

Keywords: sputtering, A$^{\mathrm{III}}$B$^{\mathrm{V}}$, nanotopography, preferential sputtering, surface segregation, XPS.

Received: 13.11.2024
Revised: 15.01.2025
Accepted: 15.01.2025

DOI: 10.61011/FTP.2024.12.59828.7328

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