Surface, interfaces, thin films

Mechanisms of current transport in TiN/Ge$_2$Sb$_2$Te$_5$/Au structure

S. A. Fefelov^a, L. P. Kazakova^ab, N. A. Bogoslovskii^a, A. B. Bylev<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg State Forest Technical University under name of S. M. Kirov

Abstract: The results of the study of Ge$_2$Sb$_2$Te$_5$ films of submicron thickness from 40 to 800 nm are presented. The current-voltage characteristics of TiN/Ge$_2$Sb$_2$Te$_5$/Au structures were measured and compared. It is established that the electrode resistance and the near-contact space charge region have a significant effect on the current-voltage characteristic. It is shown that the near contact space charge region, located mainly in the Ge$_2$Sb$_2$Te$_5$ film, is the region where the switching process appears. The critical field strength at which the switching process in the space charge region begins is estimated. A method for determining the field strength in the amorphous part of the film before switching is proposed.

Keywords: chalcogenide glassy semiconductors, Ge$_2$Sb$_2$Te$_5$, phase-change memory, switching, contact resistance.

Received: 10.10.2024
Revised: 27.12.2024
Accepted: 16.01.2025

DOI: 10.61011/FTP.2024.12.59826.7194

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