Abstract:
The results of an experimental study of the ablation thresholds of monocrystalline and porous 77 and 96% silicon are presented. The morphology of the samples was studied after exposure to femtosecond laser radiation with a pulse energy of 1–10 $\mu$J. The dependences of the size of the impact trace on the embedded laser energy are obtained, and the thresholds of laser ablation are determined. It has been found that at high porosity, the size of the ablation region grows faster with increasing energy than for monocrystalline silicon and silicon of lower porosity.
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