Abstract:
The effect of irradiation with argon ions with an energy of 53 MeV in the dose range (1–7) $\cdot$ 10$^{10}$ cm$^{-2}$ on the current-voltage characteristics of Schottky diodes Cr/SiC(4H) with the doping level of the epitaxial layer (1 and 30) $\cdot$ 10$^{14}$ cm$^{-3}$ has been studied. In the characteristics of diodes both before and after irradiation, effects have been discovered and discussed that make it difficult to interpret the results, assess the radiation resistance of diodes and confirm the influence of epitaxial layer defects on the characteristics of diodes. An upper estimate of the threshold dose of irradiation (up to 10$^{10}$ cm$^{-2}$) with Ar$^{8+}$ ions with an energy of 53 MeV is given.
Keywords:SiC, Schottky diode, Ar$^{8+}$ irradiation, IV characteristics, shunts, defects.
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