Abstract:
Aluminum-based annular zones allow to form a system of end-to-end closed epitaxial channels with $p$-type conductivity in a silicon wafer without crossing adjacent zones. It eliminates the possibility of zone discontinuity peculiar for intersecting linear zones and increases the reproducibility of the thermomigration method. The features of ring zones transformation in silicon at various stages of migration in direction $\langle$100$\rangle$ have been experimentally revealed. The observed changes of the zones shape and epitaxial channels caused by asymmetry of dissolution front of the liquid zone due to the features of facet at the bending of the linear zone. Faceting on the inner contour of the zone is suppressed and preserved on the outer one.
Keywords:thermomigration, temperature gradient, silicon.
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