F. F. Murzakhanov, G. V. Mamin, M. A. Sadovnikova, D. V. Shurtakova, O. P. Kazarova, M. R. Gafurov, “Negatively charged nitrogen-vacancy centers in a silicon carbide crystal of $6H$-$^{28}\mathrm{SiC}$”, Fizika i Tekhnika Poluprovodnikov, 2024, Volume 58, Issue 9,Pages 485

International Conference Physics.SPb/2024, October 21-25, 2024, St. Petersburg

Negatively charged nitrogen-vacancy centers in a silicon carbide crystal of $6H$-$^{28}\mathrm{SiC}$

F. F. Murzakhanov^a, G. V. Mamin^a, M. A. Sadovnikova^a, D. V. Shurtakova^a, O. P. Kazarova^b, M. R. Gafurov^a

^a Institute of Physics, Kazan (Volga region) Federal University, 420008 Kazan, Russia
^b Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: High-spin $(S=1)$ color centers in isotope-modified crystal $6H$-$^{28}\mathrm{SiC}$ have been identified by high-frequency electron paramagnetic resonance techniques. The components of the spin Hamiltonian $(g, D, A)$ of negatively charged nitrogen-vacancy $(NV^-)$ centers are determined and the influence of optical excitation modes on their relaxation characteristics is studied. The obtained results prove the potential possibility of using $NV^-$ defects in $6H$-$^{28}\mathrm{SiC}$ for the material implementation of qubits and spin-photonic interfaces.

Keywords: spin defects, silicon carbide, optical polarization.

Received: 19.04.2024
Revised: 14.08.2024
Accepted: 30.10.2024

DOI: 10.61011/FTP.2024.09.59307.6309A