International Conference Physics.SPb/2024, October 21-25, 2024, St. Petersburg

Temperature dependence of the carrier removal rate in 4H-SiC

S. Yu. Davydov^a, K. S. Davydovskaja^a, V. V. Kozlovsky^b, A. A. Lebedev<sup>a

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia

Abstract: The temperature dependence of the carrier removal rate in 4H-SiC upon irradiation with electrons with energy of 0.9 MeV and protons with energy of (15 MeV) is considered. It was found that this dependence is exponential in nature with activation energies of 49–76 meV. It is shown that these values are close to the energies of acoustic phonons in SiC. It has been suggested that acoustic phonons can stimulate the annealing of radiation defects.

Keywords: irradiation with electrons and protons, annihilation of structural defects, acoustic phonons.

Received: 16.04.2024
Revised: 01.08.2024
Accepted: 30.10.2024

DOI: 10.61011/FTP.2024.09.59306.6289A

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