V. N. Bessolov, E. V. Konenkova, T. A. Orlova, L. A. Sokura, A. V. Solomnikova, Sh. Sh. Sharofidinov, M. P. Scheglov, “HVPE epitaxy of semipolar AlN(10<nobr>$\bar{1}$</nobr>1) layers on the AlN/Si(100) template”, Fizika i Tekhnika Poluprovodnikov, 2024, Volume 58, Issue 9,Pages <nobr>474

International Conference Physics.SPb/2024, October 21-25, 2024, St. Petersburg

HVPE epitaxy of semipolar AlN(10$\bar{1}$1) layers on the AlN/Si(100) template

V. N. Bessolov^a, E. V. Konenkova^a, T. A. Orlova^a, L. A. Sokura^ab, A. V. Solomnikova^c, Sh. Sh. Sharofidinov^a, M. P. Scheglov^a

^a Ioffe Institute, 194021 St. Petersburg, Russia
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 St. Petersburg, Russia
^c Saint Petersburg Electrotechnical University "LETI", 197376 St. Petersburg, Russia

Abstract: The morphology of semipolar AlN(10$\bar{1}$1) layers grown by HVPE on an AlN/Si(100) template with a thickness of 20 nm formed by MOCVD on a nanostructured silicon substrate was studied by AFM method. The average roughness value for semipolar AlN(10$\bar{1}$1) layers was 36 nm for layers with a thickness of 5 mkm, with an FW HM ($\omega$-geometry) of about 2.5$^\circ$. It is shown that such a combined approach of AlN epitaxy on a nanostructured Si(100) substrate results in smoother epitaxial layers.

Keywords: aluminum nitride, nanostructured silicon substrate, vapour-phase epitaxy.

Received: 26.04.2024
Revised: 28.08.2024
Accepted: 30.10.2024

DOI: 10.61011/FTP.2024.09.59304.6418A