Amorphous, glassy, organic semiconductors

Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor

S. A. Fefelov^a, L. P. Kazakova^ab, N. A. Bogoslovskii^a, A. B. Bylev^b, E. V. Gushchina^a, Zh. K. Tolepov^c, A. S. Zhakypov^c, O. Yu. Prikhodko<sup>c

a</sup> Ioffe Institute, 194021 St. Petersburg, Russia
^b Saint Petersburg State Forest Technical University under name of S. M. Kirov, 194021 St. Petersburg, Russia
^c Al-Farabi Kazakh National University, 050038 Almaty, Kazakhstan

Abstract: The current-voltage characteristics of thin-film samples of the Ge$_2$Sb$_2$Te$_5$ phase-change memory material are measured in a current control mode. The influence of Bi impurity on the main parameters of the current-voltage characteristic is studied. The obtained results show an increase in the stability of the electrical properties of Ge$_2$Sb$_2$Te$_5$ when doped with Bi at concentrations of 6.3 and 12.0 at.%. The introduction of Bi impurity leads to the disappearance of voltage fluctuations after switching.

Keywords: chalcogenide glassy semiconductors, Ge$_2$Sb$_2$Te$_5$, phase-change memory, bismuth doping.

Received: 12.04.2024
Revised: 19.09.2024
Accepted: 01.10.2024

DOI: 10.61011/FTP.2024.08.59203.6261

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