E. A. Arkhipova, M. N. Drozdov, S. A. Kraev, O. I. Khrykin, A. I. Okhapkin, M. A. Lobaev, A. L. Vikharev, V. A. Isaev, S. A. Bogdanov, “Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability”, Fizika i Tekhnika Poluprovodnikov, 2024, Volume 58, Issue 8,Pages 409

XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, 11-15 March 2024

Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability

E. A. Arkhipova^a, M. N. Drozdov^a, S. A. Kraev^a, O. I. Khrykin^a, A. I. Okhapkin^a, M. A. Lobaev^b, A. L. Vikharev^b, V. A. Isaev^b, S. A. Bogdanov^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, 607680 Nizhny Novgorod, Russia
^b Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia

Abstract: The possibility of decreasing the resistivity of ohmic contact to $p$- and $n$-type diamond epitaxial layers by using heavily boron- and phosphorus-alloyed layers, variation of different materials for metallization and annealing of contacts has been investigated. Two types of ohmic contacts have been studied: Ti/Mo/Au and Ti/Pt/Au. The use of platinum as a diffusion barrier in a three-layer system made it possible to reduce the specific contact resistance to $p$-type diamond by an order of magnitude compared to molybdenum to 2.7 $\cdot$ 10$^{-6}$ $\Omega$ $\cdot$ cm$^2$, which maintains stability during high-temperature annealing. A specific resistance of ohmic contacts to $n$-type diamond of 0.02$\Omega$ $\cdot$ cm$^2$ has been achieved. The current-voltage characteristic of the resulting contacts is linear.

Keywords: epitaxial layers of diamond, boron, phosphorus, ohmic contacts.

Received: 22.04.2024
Revised: 29.10.2024
Accepted: 29.10.2024

DOI: 10.61011/FTP.2024.08.59199.6349H