XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, 11-15 March 2024

Potential speed of a diamond field-effect transistor on subsurface two-dimensional hole gas

V. A. Kukushkin^ab, Yu. V. Kukushkin<sup>b

a</sup> Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: It is shown that the significant change of hole mobility in a two-dimensional hole gas under H-terminated surface of artificial diamond by the variation of a strong orthogonal electric field detected lately can be used for the creation of a high-speed diamond field-effect transistor. According to calculations made for realistic parameters of such a device the time of more than 50% modulation of source-drain current by gate voltage rapidly decreases with the increase of the hole sheet density in the subsurface conduction channel formed by this gas and for its value 7 $\cdot$ 10$^{13}$ cm$^{-2}$ achieves 7 ps.

Keywords: diamond, high-speed field-effect transistor, mobility.

UDC: 621.315.592

Received: 15.04.2024
Revised: 20.06.2024
Accepted: 20.06.2024

DOI: 10.61011/FTP.2024.06.58941.6258H

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