Abstract:
The electron paramagnetic resonance spectra of centers localized on the (111), (110), and (100) oriented surfaces of silicon wafers were observed and investigated using the spin dependent recombination change in microwave photoconductivity of samples. It was shown that dominant recombination centers created after natural oxidization on air at room temperature on the (111)- and (110)-surfaces are the silicon dangling bond centers, so called Pb-centers. On (100)-surface the pairs of dangling bonds are responsible for spin dependent recombination. The optimal experimental conditions such as microwave power, light intensity, and temperature were discussed for detection of surface recombination centers with higher sensitivity compared to usual electron paramagnetic resonance method.
Keywords:silicon, surface, spin dependent recombination, electron paramagnetic resonance.
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