Abstract:
Formation process of the self-assembled GaSbP quantum dots (QDs) on the AlP(100) surface from flows of Sb$_4$, P$_2$ and Ga atoms was investigated by reflection high-energy electron diffraction technique. The dependences of the QDs nucleation critical thickness $(D_{\mathrm{eff}})$, the elastic deformations in QDs and the composition of the GaSbP alloy of QDs, on the substrate temperature $(T_S)$ and the pressure ratio in the flows of Sb$_4$ and P$_2$ molecules ($P$(Sb$_4$) : $P$(P$_2$)) was studied. It was found that in wide ranges of $T_S$ and $P$(Sb$_4$):$P$(P$_2$) values (380–460$^\circ$C and 0.07–27 accordingly), unstrained GaSbP/AlP quantum dots are formed.
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