Semiconductor physics

Influence of strip mesastructure topology on a low-voltage GaAs thyristor main parameters

K. S. Zhidyaev, A. B. Chigineva, N. V. Baidus, I. V. Samartsev, A. V. Kudrin

National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia

Abstract: A GaAs thyristor with mesa-strip has been fabricated and experimentally studied. It is shown that changing topology of the heavily doped $p$-emitter and the anode ohmic contact leads to an increase in magnitude and decrease in variation of breakover voltage of the samples, as well as to a decrease in off-state current.

Keywords: thyristors, mesastructure, gallium arsenide, breakover voltage, off-state current.

Received: 14.03.2024
Revised: 19.03.2024
Accepted: 19.04.2024

DOI: 10.61011/FTP.2024.03.58407.6148

Bibliographic databases:

•