Micro- and nanocrystalline, porous, composite semiconductors

Structural state of InSb in InSb/opal composite material according to transmission electron microscopy data

A. E. Kalmykov, L. M. Sorokin, D. A. Kurdyukov

Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: The structural state of indium antimonide introduced into the opal matrix was studied by high-resolution transmission electron microscopy. It is shown that the filler has a microcrystalline structure with grain sizes an order of magnitude larger than the dimensions of individual matrix pores. The defective structure of individual crystals is characterized.

Keywords: composite, opal, InSb, transmission electron microscopy.

Received: 26.02.2024
Revised: 18.03.2024
Accepted: 21.03.2024

DOI: 10.61011/FTP.2024.02.57875.6074

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