Non-electronic properties of semiconductors (atomic structure, diffusion)

Interaction of Mg with oxygen and carbon in silicon

V. B. Shuman, Yu. A. Astrov, A. N. Lodygin, L. M. Portsel'

Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: A method for determining the solubility of magnesium (Mg) in silicon with oxygen content greater than 3 $\cdot$ 10$^{17}$ cm$^{-3}$ is proposed. The method is based on the study the intensity of oxygen absorption band 1106 cm$^{-1}$ during long-time diffusion annealing of silicon. As a result of optically inactive complex MgO formation, absorption and concentration of O decreases. The difference between O concentration before and after diffusion corresponds to concentration of Mg in the crystal. The Mg solubility in dislociation-free Si at 1250$^\circ$C equal to (2.5 $\pm$ 0.19) $\cdot$ 10$^{17}$ cm$^{-3}$ is determined. This value coincides with the result obtained earlier by secondary ion mass spectrometry in oxygen-free Si.

Keywords: silicon doping, diffusion, impurity centers.

Received: 14.02.2024
Revised: 27.02.2024
Accepted: 29.02.2024

DOI: 10.61011/FTP.2024.02.57872.6028

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