Abstract:
The carrier removal rates during proton and electron irradiations of $n$-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 $\le\Phi_p\le$ 5 $\cdot$ 10$^{14}$ cm$^{-2}$; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 $\le\Phi_n\le$ 5 $\cdot$ 10$^{16}$ cm$^{-2}$. The value of the removal rate during proton irradiation, $\eta_p\approx$140 cm$^{-1}$, is close to the lower limit of currently known values of $\eta_p$ and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, $\eta_e$ is $\approx$0.47 cm$^{-1}$ and corresponds to the typical values of $\eta_e$ for type gallium nitride obtained by various methods.
Keywords:gallium nitride, proton irradiation, electron irradiation, carrier removal rate.
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