This article is cited in 2 papers

Electronic properties of semiconductors

Multi-phonon relaxation of the 1$s(T_2)$ triplet of neutral magnesium donors in silicon

N. A. Bekin, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod, 603950 Nizhny Novgorod, Russia

Abstract: Using adiabatic and one-electron approximations, the rate of multiphonon relaxation of the 1$s(T_2)$ triplet of neutral magnesium donors in silicon is estimated. The dominant scattering processes associated with interaction with LO and LA phonons are taken into account. According to calculations, the rate of multiphonon relaxation at zero temperature is of the order of 10$^{11}$ s$^{-1}$.

Keywords: deep impurities, magnesium donors in silicon, multiphonon relaxation, adiabatic approximation.

Received: 07.11.2023
Revised: 13.12.2023
Accepted: 16.01.2024

DOI: 10.61011/FTP.2024.01.57629.5727

 English version: Semiconductors, 2024, 58:3, 202–208

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